vishay siliconix SIA431DJ document number: 65267 s12-1141-rev. b, 21-may-12 www.vishay.com 1 new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com p-channel 20-v (d-s) mosfet features ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ? 100 % r g tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? load switch, pa switch and battery switch for portable devices notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bo ttom side solder interconnection. e. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 80 c/w. product summary v ds (v) r ds(on) ( ? )i d (a) q g (typ.) - 20 0.025 at v gs = - 4.5 v - 12 a 24 nc 0.031 at v gs = - 2.5 v - 12 a 0.041 at v gs = - 1.8 v - 12 a 0.070 at v gs = - 1.5 v - 4 powerpak sc-70-6l-sin g le 6 5 4 1 2 3 d d d d g s s 2.05 mm 2.05 mm markin g code x x x b k x lot tracea b ility and date code part # code orderin g information: SIA431DJ-t4-ge3 (lead (p b )-free and halogen-free) SIA431DJ-t1-ge3 (lead (p b )-free and halogen-free) s g d p-channel mosfet absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 12 a a t c = 70 c - 12 a t a = 25 c - 9.6 b, c t a = 70 c - 7.7 b, c pulsed drain current i dm - 30 continuous source-drain diode current t c = 25 c i s - 12 a t a = 25 c - 2.9 b, c maximum power dissipation t c = 25 c p d 19 w t c = 70 c 12 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 28 36 c/w maximum junction-to-case (drain) steady state r thjc 5.3 6.5
www.vishay.com 2 document number: 65267 s12-1141-rev. b, 21-may-12 vishay siliconix SIA431DJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 14.5 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 2.7 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 0.85 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds ?? - 5 v, v gs = - 4.5 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 6.5 a 0.020 0.025 ? v gs = - 2.5 v, i d = - 5.8 a 0.025 0.031 v gs = - 1.8 v, i d = - 2.5 a 0.034 0.041 v gs = - 1.5 v, i d = - 1.5 a 0.045 0.070 forward transconductance a g fs v ds = - 10 v, i d = - 6.5 a 31 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 1700 pf output capacitance c oss 230 reverse transfer capacitance c rss 205 total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 9.6 a 40 60 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 9.6 a 24 36 gate-source charge q gs 2.4 gate-drain charge q gd 6.5 gate resistance r g f = 1 mhz 1.3 6.3 13 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 1.3 ? i d ? - 7.7 a, v gen = - 4.5 v, r g = 1 ? 22 35 ns rise time t r 25 40 turn-off delay time t d(off) 65 100 fall time t f 25 40 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 1.3 ? i d ? - 7.7 a, v gen = - 8 v, r g = 1 ? 10 15 rise time t r 10 15 turn-off delay time t d(off) 65 100 fall time t f 20 30 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 12 a pulse diode forward current i sm - 30 body diode voltage v sd i s = - 7.7 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 7.7 a, di/dt = 100 a/s, t j = 25 c 35 60 ns body diode reverse recovery charge q rr 21 35 nc reverse recovery fall time t a 20 ns reverse recovery rise time t b 15
document number: 65267 s12-1141-rev. b, 21-may-12 www.vishay.com 3 vishay siliconix SIA431DJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) i d - drainc u rrent (a) v gs =5 v thr u 2 v v gs =1.5 v v gs =1 v 0.00 0.02 0.04 0.06 0.0 8 0.10 0 5 10 15 20 25 30 r ds(on) - on-resistance ( ) i d - drainc u rrent (a) v gs =1.5 v v gs =2.5 v v gs =4.5 v v gs =1. 8v 0 2 4 6 8 010203040 i d =9.6a q g - total gate charge (nc) v gs - gate-to-so u rce v oltage ( v ) v ds =16 v v ds =10 v v ds =5 v transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 1.5 v gs - gate-to-so u rce v oltage ( v ) i d - drainc u rrent (a) t c = 25 c t c = 125 c t c = - 55 c c rss 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 1.5 v , 2 a 4.5 v and 2.5 v , 6.5 a 1. 8 v , 6.5 a
www.vishay.com 4 document number: 65267 s12-1141-rev. b, 21-may-12 vishay siliconix SIA431DJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com typical characteristics 25 c, unless otherwise noted soure-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c v sd - so u rce-to-drain v oltage ( v ) i s - so u rce c u rrent (a) t j = 25 c 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 - 50 - 25 0 25 50 75 100 125 150 i d =250 a v gs(th) ( v ) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.0 8 012345 r ds(on) - on-resistance ( ) v gs - gate-to-so u rce v oltage ( v ) i d = 6.5 a, 125 c i d = 2 a, 125 c i d = 6.5 a, 25 c i d = 2 a, 25 c po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 safe operating area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 i d - drainc u rrent (a) 0.1 t a = 25 c single p u lse 10 ms 100 ms dc limited b yr ds(on) * b v dss limited 1ms 100 s 10 s 1s
document number: 65267 s12-1141-rev. b, 21-may-12 www.vishay.com 5 vishay siliconix SIA431DJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 0 255075100125150 t c - case temperat u re (c) i d - drainc u rrent (a) package limited power derating 0 5 10 15 20 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 65267 s12-1141-rev. b, 21-may-12 vishay siliconix SIA431DJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65267 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -4 1 0.1 0.2 0.1 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 single p u lse 0.05 10 -1
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix document number: 70486 www.vishay.com revision: 21-jan-08 11 application note recommended pad layout for powerpak ? sc70-6l single 1 0.300 (0.012) 0.350 (0.014) 2.200 (0.087) 1.500 (0.059) 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) 0.355 (0.014) 0.235 (0.009) 0.475 (0.019) 0.870 (0.034) 0.275 (0.011) 0.350 (0.014) 0.550 (0.022) 0.650 (0.026) dimensions in mm/(inches) return to index
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